| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve a multi-level semiconductor memory device storing multi-level data of ternary or more values by utilizing a nonvolatile memory device storing binary data. <P>SOLUTION: Voltage (VBOOST) transmitted to a selection word line is divided, and a reference cell (RCA-RCC) is set to a conduction state according to divided voltage. Reference voltage (VREF-VREf2) is generated according to a current flowing in the reference cell, and memory cell data are detected using this reference voltage. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
