THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING FOR THE SAME

摘要

A thin film transistor panel and a method of manufacturing for the same are provided to prevent the degradation of a thin film transistor due to the diffusion of copper by making the lower part as a block layer. A gate line is formed on the substrate(121) while including a gate electrode(131), and a semiconductor layer(139) comprises a channel region. A data line(153) is formed on the semiconductor layer while including a source electrode arranged on the gate electrode. A drain electrode is arranged on the gate electrode with being separated from the source electrode and it is formed at the same layer of the data wire. A protective film(159) is formed on a data line and the drain electrode while including a first contact hole exposing the drain electrode.