| 摘要 |
A semiconductor device and a method for manufacturing the same are provided to prevent an electrical signal flowing through a bit line contact by forming a shielding film between a bit line contact and a land plug. In a semiconductor device and a method for manufacturing the same, a semiconductor substrate(100) comprises a dummy cell region composed of an active area, a bit line contact area, and a main cell region. A plurality of dummy gates(106) and a main gate(108) are formed on the dummy cell region and the main cell drain of the semiconductor substrate. A landing plug(112) is formed a dummy gate at the dummy cell region and a main cell drain and at an active region excluding the main gate region.
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