发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a decrease in breakdown voltage due to current concentration from being caused by suppressing an increase in potential difference between float layers in an extension direction of the float layers. SOLUTION: A gate electrode 7a is electrically connected to a gate wiring 11 applied with a gate voltage, and dummy gate electrodes 7b and 7c are connected to a first float wiring 12 electrically connected to a first float layer 3b; and a second float layer 3c is electrically connected to a second float wiring 13, and a third float layer 3d is electrically connected to a third float wiring 14. Thus, the dummy gate electrodes 7b and 7c are electrically connected to the first float layer 3b to obtain a structure wherein a switching surge and switching loss are balanced with each other. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009206478(A) 申请公布日期 2009.09.10
申请号 JP20080271135 申请日期 2008.10.21
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD;DENSO CORP 发明人 KOYAMA MASAKI;OKABE YOSHIFUMI;ASAI MAKOTO;FUJII TAKASHI;YOSHIKAWA ISAO
分类号 H01L29/739;H01L29/78 主分类号 H01L29/739
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