| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having a structure such that formation of a barrier disturbing implantation of holes can be avoided and burying of quantum thin wires can be controlled, and a method of manufacturing the semiconductor laser. SOLUTION: The semiconductor laser comprises a first optical confinement layer 15 provided on a first clad layer 13 made of an n-type semiconductor, a plurality of thin wires 17 which are arrayed periodically, a burying semiconductor region 19 which has a first portion provided on side surfaces of the respective quantum thin wires 17 and the first optical confinement layer 15 and a second portion provided on upper surfaces of the respective quantum thin wires and in which the quantum thin wires are buried, and a second optical confinement layer 21 which is formed of a p-type GaInAsP semiconductor and provided on the burying semiconductor region 19. Therefore, the burying semiconductor region 19 is formed even on the upper surfaces of the quantum thin wires 17. The burying semiconductor region 19 is formed of an AlInAs semiconductor, so it is never a barrier disturbing implantation of holes. COPYRIGHT: (C)2009,JPO&INPIT
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