| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric storage device which has a small area of the unit cell and which can be highly integrated. SOLUTION: The ferroelectric storage device includes a plurality of ferroelectric capacitors, cell transistors provided corresponding to the ferroelectric capacitors, and bit line contacts for the connection between cell transistors and bit lines. The ferroelectric capacitor and the cell transistor constitute a unit cell. The plurality of unit cells constitute a cell string by connecting the cell transistors of the plurality of unit cells in series. A plurality of word lines are connected to gates of the plurality of cell transistors or function as gates. A plurality of plate lines are connected to second electrodes of the plurality of ferroelectric capacitors. Some bit lines of the plurality of bit lines are connected only to cell transistors at one side of the cell strings via the bit line contacts. COPYRIGHT: (C)2009,JPO&INPIT
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