| 摘要 |
A multi-level nonvolatile memory device using a resistor is provided to enhance reliability of a read operation by using one sensing part. A nonvolatile memory device includes a memory cell array(10), a column selection circuit, a row selection circuit, a read circuit(101), and a driving bias providing part(300). A multi-level memory cell changes a resistance level according to stored data. The read circuit provides a read bias of a step shape to the multi-level memory cell inside a read cycle of one time, and reads a resistance level of the multi-level memory cell. The read circuit includes a read bias providing part. The read bias providing part receives a plurality of driving biases having a different level, and provides a read bias of a step shape.
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