| 摘要 |
PROBLEM TO BE SOLVED: To provide a display device capable of reducing manufacturing man-hours. SOLUTION: A display device includes a p-type thin film transistor on a substrate. With the p-type thin film transistor, a semiconductor layer is formed on an upper face of a gate electrode via an insulation film. On an upper face of the semiconductor layer, a drain electrode and a source electrode are formed having a separation part and being placed opposite to each other. A p-type impurity diffusion layer is formed at interfaces between the drain electrode and the semiconductor layer and between the source electrode and the semiconductor layer. COPYRIGHT: (C)2009,JPO&INPIT |
