发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve the reliability of semiconductor chips by increasing the number of the semiconductor chips obtained from wafers. SOLUTION: By a method of manufacturing a semiconductor device comprising the steps of: (A) forming a device portion 12 in a substrate; (B) forming a conductive film on a rear face of the substrate in which the device portion 12 is formed, and further carrying out a patterning of the conductive film to form an electrode layer 13; (C) forming a trench groove 14 in the substrate along a shape of the electrode layer 13 by etching; and (D) making the device portion 12 into pieces along the trench groove 14, the number of semiconductor chips 10 obtained from the wafers is increased and consequently the reliability of the semiconductor chips 10 is improved. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009206221(A) 申请公布日期 2009.09.10
申请号 JP20080045357 申请日期 2008.02.27
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD 发明人 TAWARA TAKESHI;NAKAMURA SHUNICHI
分类号 H01L21/301;H01L21/3065;H01L29/12;H01L29/78 主分类号 H01L21/301
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