发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of semiconductor chips by increasing the number of the semiconductor chips obtained from wafers. SOLUTION: By a method of manufacturing a semiconductor device comprising the steps of: (A) forming a device portion 12 in a substrate; (B) forming a conductive film on a rear face of the substrate in which the device portion 12 is formed, and further carrying out a patterning of the conductive film to form an electrode layer 13; (C) forming a trench groove 14 in the substrate along a shape of the electrode layer 13 by etching; and (D) making the device portion 12 into pieces along the trench groove 14, the number of semiconductor chips 10 obtained from the wafers is increased and consequently the reliability of the semiconductor chips 10 is improved. COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009206221(A) |
申请公布日期 |
2009.09.10 |
申请号 |
JP20080045357 |
申请日期 |
2008.02.27 |
申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD |
发明人 |
TAWARA TAKESHI;NAKAMURA SHUNICHI |
分类号 |
H01L21/301;H01L21/3065;H01L29/12;H01L29/78 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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