| 摘要 |
FIELD: physics. ^ SUBSTANCE: invention relates to microelectronics and can be used in making multi-element infrared photodetectors. In the method of making a MIS-structure on InAs for multi-element photodetectors, a semiconductor substrate of indium arsenide is immersed into an electrolyte, containing an electroconductive component, an organic solvent and a fluorine containing additive - ammonium fluoride. Anodic oxidation is done, creating a thin layer which forms a semiconductor-dielectric boundary surface. The substrate is then taken out and on the thin layer which forms the boundary surface, a dielectric layer is grown, after which the gate is formed. In the electrolyte, the fluorine containing additive is taken in an amount ranging from 0.1 to 15 g/l. ^ EFFECT: higher quality of the MIS-structure due to reduced surface-state density to the order of 1010cm-2eV-1 and built-in charge to values less than 1011cm-2 resulting from formation of arsenic and indium fluorides, as well as indium phosphate at the inter-phase boundary. ^ 11 cl, 1 dwg, 4 ex |
