| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist protective film material for forming a protective film on a photoresist film to protect the photoresist film in liquid immersion photolithography, and a patterning method using the material. <P>SOLUTION: The resist protective film material for forming the protective film on the photoresist film comprises at least a polymer compound I including a repeating unit (a) represented by a general formula (1), and a polymer compound II including a repeating unit having a sulfonic acid or an amine salt of a sulfonic acid. <P>COPYRIGHT: (C)2009,JPO&INPIT |
