| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a display device configured to reduce the manufacture man-hour. <P>SOLUTION: The display device has a thin film transistor TFT which has a gate electrode formed on an upper surface of a gate insulating film formed covering a semiconductor layer across the semiconductor layer, and also has a pair of electrodes disposed on an upper surface of the semiconductor layer opposed to each other with a region on the gate electrode interposed. The thin film transistor is composed of an n-type thin film transistor and a p-type thin film transistor, wherein a gate electrode of at least one of the n-type thin film transistor and p-type thin film transistor has a metal layer which is formed on the gate insulating film side and is made of a material different from the material of the gate electrode, and an LDD layer is formed in a semiconductor layer of at least one of the n-type thin film transistor and p-type thin film transistor. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
