| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor growth device capable of suppressing deposition of reactant into exhaust system piping. SOLUTION: The vapor growth device is provided with a chamber in which an internal temperature and pressure can be controlled, a susceptor which is supported by a rotation axis in the chamber and which is for installing a growth substrate, a gas supply means supplying material gas to the growth substrate on the susceptor, a stage which is confronted with the susceptor in the chamber and supports the susceptor, a structure which is disposed on the stage and has a diameter size larger than the stage, and an exhaust means which is arranged in down stream of the structure if viewed from a flowing direction of gas in the chamber and carries out exhaust gas from within the chamber. COPYRIGHT: (C)2009,JPO&INPIT
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