METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which uses a continuous oscillation laser device for improving characteristics of the semiconductor device.

SOLUTION: A semiconductor film is formed on a substrate and crystallized with a plurality of laser beams. The plurality of laser beams are made incident obliquely to the vertical direction of the substrate at the same angleϕof incidence to manufacture the semiconductor device having high performance. Especially, the semiconductor device with high performance is obtained by satisfyingϕ≥arcsin(W/2d), where W is the beam width and (d) is the thickness of the substrate.

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