发明名称
摘要 <p>A method of bonding a semiconductor substrate to a metal substrate is disclosed. In some embodiments the method includes forming a semiconductor device in a semiconductor substrate, the semiconductor device comprising a first surface. The method further includes obtaining a metal substrate. The metal substrate is bonded to the first surface of the semiconductor device, wherein at least a portion of the metal substrate forms an electrical terminal for the semiconductor device.</p>
申请公布号 JP2009532913(A) 申请公布日期 2009.09.10
申请号 JP20090504368 申请日期 2007.03.12
申请人 发明人
分类号 H01L29/78;H01L21/28;H01L21/336;H01L29/417 主分类号 H01L29/78
代理机构 代理人
主权项
地址
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