发明名称 |
Methods of manufcturing a semiconductor device |
摘要 |
Isolation regions are formed on a substrate to define an active region. A gate electrode is formed on the active region. A spacer structure is formed on a sidewall of the gate electrode. A gate silicide layer is formed on the gate electrode and a source/drain silicide layer is formed on the active region adjacent to the gate electrode. An upper portion of the gate silicide layer and a portion of the spacer structure are simultaneously removed to form a spacer structure pattern and a gate silicide layer pattern. A stress layer is formed to cover the gate electrode and spacer structure pattern.
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申请公布号 |
US2009227082(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20090381175 |
申请日期 |
2009.03.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN DONG-SUK;KIM KI-CHUL;LEE JUNG-DEOG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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