发明名称 |
Method for fabricating semiconductor device |
摘要 |
A method for fabricating a semiconductor device includes the steps of forming an oxide film on a silicon carbide substrate; forming a gate electrode layer on the oxide film thereafter to pattern the gate electrode layer so as to form a gate electrode, comprising: and performing a thermal treatment to the gate electrode layer or the gate electrode in a mixed gas atmosphere of an oxidized gas and an inert gas.
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申请公布号 |
US2009227100(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20090379931 |
申请日期 |
2009.03.04 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
YAMANOBE TOMOMI;YOSHIE TORU |
分类号 |
H01L21/04 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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