| 摘要 |
A nitride based a light emitting device is provided to reduce tensile strain problem by inserting an interlayer between n-type nitride semiconductor layers and reducing threading dislocation generated on the boundary of a sapphire substrate and GaN. In a nitride based a light emitting device, a buffer layer(2-2), an n-type nitride semiconductor layer(2-3), and an active layer(2-4) and a p-type nitride semiconductor layer(2-5) are included on a substrate(2-1). At least one interlayer made of Al1-xSixN is inserted into the n-type nitride semiconductor layer. The number of the interlayer is between 2-10 and the interlayer is grown between 800~1000°C. |
