CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a crystal growth method for improving flatness of the surface of a grown crystal, and to provide a crystal growth apparatus and a semiconductor device.

SOLUTION: A substrate 6 is immersed in a source liquid L in a reaction chamber 4, and source gas G is supplied to the reaction chamber 4 to allow the source liquid L to react with the source gas G to grow a crystal 7 of a compound by the reaction of the source liquid L and the source gas G on the substrate 6. The reaction chamber is provided with a substrate base 21 that descends, for example as a source gas concentration reducing means to reduce the source gas concentration in the source liquid L near the surface of the substrate 6 with proceeding of the crystal growth.

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