| 摘要 |
PROBLEM TO BE SOLVED: To provide a defect analyzing method that can easily determine the causes of defects from the results of defect checking, and also provide a defect analyzing program and device. SOLUTION: This analyzing method has a step of checking defects in SRAMs or LSIs mounting SRAMs by using a tester (Step S21), a step of making the FBM of semiconductors having defects from the results of checking (Step S24), a step of obtaining the number of semiconductors having defects of a defect mode for each defect mode from the FBM (Step S25), and a step of obtaining a manufacturing step having the largest total critical area based on the relations between the sizes of critical areas obtained in advance for every manufacturing steps and for every defect mode (analyzed result 2) and the number of semiconductors obtained in Step S25 (Step S28). COPYRIGHT: (C)2009,JPO&INPIT |
