| 摘要 |
PROBLEM TO BE SOLVED: To provide a target material for forming thin film such as a semiconductor, a solar cell or a liquid crystal, wherein the generation of particles is suppressed by reducing the oxygen concentration and the workability and the film quality in the film forming are improved, and a method of manufacturing the same. SOLUTION: The target material includes a crystal structure oriented in a fixed direction A to give priority and includes≤3.0×10<SP>18</SP>atom/cm<SP>3</SP>oxygen concentration, preferably≤1.0×10<SP>18</SP>atom/cm<SP>3</SP>oxygen concentration, 1-20 mm average crystal diameter on a sputter surface and the ratio of oxygen concentration to carbon concentration (oxygen concentration/carbon concentration) of≤20. The method of manufacturing the same is provided. COPYRIGHT: (C)2009,JPO&INPIT
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