| 摘要 |
A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In other preferred embodiments the pixel photodiode structures are produced beside and physically isolated from the regions where CMOS circuits are formed. In some of these preferred embodiments the isolated pixel photodiode structures are comprised of crystalline germanium deposited in cavities in a silicon substrate. This embodiment can be adapted especially for imaging at short wave infrared frequencies. Preferred embodiments are adapted for correlated double sampling.
|
