| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor which is required to have high device stability and operation stability over time and the like. <P>SOLUTION: The thin film transistor includes a gate electrode 15, a gate insulation layer 12, a channel layer 11, a source electrode 13, and a drain electrode 14 formed on a substrate 10, in which: the channel layer 11 contains indium, germanium, and oxygen; and the channel layer 11 has a compositional ratio expressed by In/(In+Ge) of 0.5 or more and 0.97 or less. <P>COPYRIGHT: (C)2009,JPO&INPIT |
