| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element that can lower diffusion temperature of impurities and prevent a decrease in light emission efficiency and an increase in threshold current. SOLUTION: Carrier density of at least one of guide layers 3a and 3g of an infrared laser active layer 3 is≥1.0×10<SP>17</SP>cm<SP>-3</SP>. Consequently, when a non-absorption region for an oscillation wavelength is formed on a light projection end surface of the infrared laser active layer 3 by effectively increasing the band gap of the infrared laser active layer 3 using diffusion of impurities, the diffusion temperature of impurities can be lowered to prevent the decrease in light emission efficiency and the increase in threshold current. COPYRIGHT: (C)2009,JPO&INPIT
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