发明名称 |
THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME |
摘要 |
A thin film transistor according to the present invention includes: a semiconductor layer (5); a source electrode (3s) and a drain electrode (3d) that each are connected to the semiconductor layer (5); an insulating layer (6) that is formed adjacent to the semiconductor layer (5); and a gate electrode (7) that faces the semiconductor layer (5) across the insulating layer (6). The semiconductor layer (5) includes an aggregate of semiconductor fine particles composed of a complex oxide. The complex oxide contains zinc and at least one selected from a group consisting of indium, gallium and rhodium.
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申请公布号 |
US2009224239(A1) |
申请公布日期 |
2009.09.10 |
申请号 |
US20070305101 |
申请日期 |
2007.06.14 |
申请人 |
PANASONIC CORPORATION |
发明人 |
WAKITA NAOHIDE |
分类号 |
H01L29/26;H01L21/336;H01L29/786 |
主分类号 |
H01L29/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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