SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof for preventing seam in peripheral region are provided to form movable dielectric film having low thickness by removing the movable dielectric film. A semiconductor substrate(200) including a first region(C) and a second region(P) is etched and the trench is formed in the first region and the second region. A first insulating layer(206) having the thickness which relatively the first region is poor than the first region within the trench in the second region is formed. In order to reclaim the trench on the first insulating layer and the device isolation structure is comprised the second insulating layer(210) is formed. The first region is the cell region. The second region is the peripheral region. The trench equipped in the first region has the narrow width which becomes smaller than the trench equipped in the second region.