| 摘要 |
A silicon substrate and a method of producing the same are provided to suppress a white spot of CCD(Charge Couple Device) by suppressing the contamination of heavy metal into a buried photo diode used for a transistor forming the CCD. In a silicon substrate and a method of producing the same, a density condition that a white spot is generated is set(S01). The getting capacity of a silicon substrate and the BMD density in the silicon substrate are set to a terminal process condition of manufacturing a device additionally(S02). An initial oxygen concentration, carbon concentration, and resistivity are calculated in relation to the silicon single crystal in pulling it(S03). The generation intensity of a white spot on a valuation device formed in a slice is measured(S09). The measurement result is compared with the white spot condition(S10). |
