| 摘要 |
A method for forming a contact plug of a semiconductor device is provided to bury aluminum uniformly without a void within a contact hole by reducing the negative slope within the inner wall of the contact hole with a dry-etching method. An interlayer dielectric(230) is formed on a semiconductor substrate(200), and a contact hole is formed within the interlayer dielectric by patterning the interlayer dielectric. A first contract plug(250) is formed by forming a first aluminum film that fills up the contact hole and covers the interlayer dielectric. A dry-etching process is performed to open voids(260) induced within the first aluminum film. A reflow process is performed for the etched first aluminum film, and a second contact hole plug that fills up the contact hole is formed by forming a second aluminum film on the first aluminum film.
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