| 摘要 |
<p>A method for manufacturing a phase shift mask is provided to prevent the deformity generated from a lithographic process by preventing the damage of the frame area in etching a pattern. In a method for manufacturing a phase shift mask, a phase shift layer and light shield layer are formed on a substrate including a main cell region(A) and the frame region(B). The light block film pattern(125) is formed by patterning the light shield layer. The amount of correction is set by measuring the critical dimension of the light block film pattern. The conductive polymer membrane blocking the light block film pattern of the frame area is formed. The critical dimension is corrected by etching the light block film pattern of the main cell area exposed by the conductive polymer membrane in based on the amount of the correction additionally.</p> |
