Semiconductor device having superlattice semiconductor layer and method of manufacturing the same
摘要
<p>Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.</p>
申请公布号
EP1505698(B1)
申请公布日期
2009.09.09
申请号
EP20040253951
申请日期
2004.06.30
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, WON-SEOK;HA, KYOUNG-HO;KWAK, JOON-SEOP;PAEK, HO-SUN;LEE, SUNG-NAM;SAKONG, TAN