METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

A method for forming a capacitor of a semiconductor device is provided to improve the yield rate by preventing defections by etching a sacrificing layer after ion-injecting dopants to the side of the sacrificing layer. A sacrificing layer is formed on a semiconductor substrate(300) at which a lower structure is formed, and a mask layer masking a region(B) that is not a net die region is formed on the sacrificing layer. A hard mask is formed on the semiconductor substrate on which the mask layer is formed. Then, a conductive layer for a storage electrode is formed on the semiconductor layer, and the sacrificing layer is etched at the edges of the net die. Dorpants are ion-injected to the exposed sides of the sacrificing layer, and the sacrificing layer is removed from the substrate.