发明名称 TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER
摘要 Apparatus and a method for confining electrons in an ion implanter are disclosed. The apparatus and method comprise a first array of magnets (31) and a second array of magnets (32) positioned along at least a portion of a beam path (30), the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side.' At least one magnet (302) in the first array may have a pole facing an opposite pole of a corresponding magnet (302) in the second array, on the first and second arrays of magnets may collectively produce cusp magnetic fields to confine electrons in or near the beam path.
申请公布号 KR20090095603(A) 申请公布日期 2009.09.09
申请号 KR20097013308 申请日期 2007.12.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 SMATLAK DONNA L.;ANGEL GORDON C.;DORAI RAJESH
分类号 H01L21/265;H01J37/30 主分类号 H01L21/265
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