发明名称 |
TECHNIQUES FOR CONFINING ELECTRONS IN AN ION IMPLANTER |
摘要 |
Apparatus and a method for confining electrons in an ion implanter are disclosed. The apparatus and method comprise a first array of magnets (31) and a second array of magnets (32) positioned along at least a portion of a beam path (30), the first array being on a first side of the beam path and the second array being on a second side of the beam path, the first side opposing the second side.' At least one magnet (302) in the first array may have a pole facing an opposite pole of a corresponding magnet (302) in the second array, on the first and second arrays of magnets may collectively produce cusp magnetic fields to confine electrons in or near the beam path.
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申请公布号 |
KR20090095603(A) |
申请公布日期 |
2009.09.09 |
申请号 |
KR20097013308 |
申请日期 |
2007.12.03 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
SMATLAK DONNA L.;ANGEL GORDON C.;DORAI RAJESH |
分类号 |
H01L21/265;H01J37/30 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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