| 摘要 |
<p>A method for forming a contact in a flash memory device is provided to increase a process margin by reducing a chip size by forming a major axis of a drain contact in small size. A method for forming a contact in a flash memory device comprises the steps of: forming an interlayer dielectric on a semiconductor substrate on which the gate patterns for selective transistor and a memory cell; forming a first drain contact hole(360a) and a first source contact hole(370a) one by one for every two active regions; forming a second drain contact hole and a second source contact hole in the region at which the first drain and source contact holes are not formed; and forming a drain contact and a source contact by burying the first and second drain and source contact holes with a conductive material.</p> |
