| 摘要 |
<p>A method for fabricating a photo-mask is provided to increase the margin of an entire exposure process by forming an oxidation film partially on the cell edge portion. A first patter(110) is formed on a mask substrate(100) including a cell region and a peripheral region, and an oxidation film(120) having uniform thickness is formed on the material on which a first pattern. The oxidation film of the exposed cell region is removed through an etching process. The first pattern is a light-blocking pattern and a phase sift layer pattern.</p> |
