| 摘要 |
<p>[Problems] providing a resistance change element capable of reducing the amount of current per cell, as compared with the conventional one, and a method of manufacturing the same. [Means of solving] In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element 71, the resistance change element 71 is configured of a lower electrode 67a made of a noble metal such as Pt, a transition metal film 68a made of a transition metal such as Ni, a transition metal oxide film 69a made of a transition metal oxide such as NiOx, and a lower electrode 70a made of a noble metal such as Pt.</p> |
