发明名称 COMPENSATION FOR PARASITIC COUPLING BETWEEN RF OR MICROWAVE TRANSISTORS IN THE SAME PACKAGE
摘要 <p>Parasitic coupling effects between RF or microwave transistors provided in a common package are compensated by connecting one or more capacitors between the transistors. By connecting the capacitor(s) at a location that corresponds to the site of the coupling, the compensation is effective over a wide frequency band. This coupling-compensation makes it feasible to provide, in a common package, RF or microwave transistors intended to operate in quadrature, thereby improving performance matching and operating efficiency of the overall device.</p>
申请公布号 EP1908167(B1) 申请公布日期 2009.09.09
申请号 EP20050788972 申请日期 2005.07.05
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 BOUNY, JEAN JACQUES;PEYROT, PASCAL
分类号 H03F1/14;H01L23/66;H03F1/32;H03F3/193 主分类号 H03F1/14
代理机构 代理人
主权项
地址