发明名称 |
COMPENSATION FOR PARASITIC COUPLING BETWEEN RF OR MICROWAVE TRANSISTORS IN THE SAME PACKAGE |
摘要 |
<p>Parasitic coupling effects between RF or microwave transistors provided in a common package are compensated by connecting one or more capacitors between the transistors. By connecting the capacitor(s) at a location that corresponds to the site of the coupling, the compensation is effective over a wide frequency band. This coupling-compensation makes it feasible to provide, in a common package, RF or microwave transistors intended to operate in quadrature, thereby improving performance matching and operating efficiency of the overall device.</p> |
申请公布号 |
EP1908167(B1) |
申请公布日期 |
2009.09.09 |
申请号 |
EP20050788972 |
申请日期 |
2005.07.05 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
BOUNY, JEAN JACQUES;PEYROT, PASCAL |
分类号 |
H03F1/14;H01L23/66;H03F1/32;H03F3/193 |
主分类号 |
H03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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