THE METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAP LAYER

摘要

A method for fabricating a non-volatile memory device having a charge trap layer is provided to prevent the problems caused by the movement of electric charge by forming a secondary shielding pattern after forming a charge trap layer with a primary shielding pattern. A hard mask film(110) is formed on a semiconductor substrate(100) at which an active region(a1) is defined by a device separation film. A contact hole is formed, wherein the contact hole is distanced at a certain length. A tunneling pattern(130) that buries the contact hole partially is formed, and a low resistant pattern(155) and a control gate electrode pattern(160) that are overlapped with the tunneling pattern is formed.