METHOD OF FORMING WIRING LAYER IN SEMICONDUCTOR DEVICE

摘要

A method of forming a wiring layer in a semiconductor device is provided to form a contact hole having a low aspect ratio by etching a first inter-insulating layer thinner than whole inter-insulating layer in order to prevent the burial defects. A first inter-insulating film(106) is formed with a first thickness(h1) among whole inter-insulating films(113) formed on a support layer(100), and a first contact plug(110) is formed within the first inter-insulating layer. The inter-insulating layer of the entire thickness by forming a second inter-insulating layer with a second thickness, and a local wiring layer(126) consisting of a first contact plug and a second contact plug(118) is formed by forming the second contact plug connected to the first contact plug in the second inter-insulating layer.