发明名称 |
Method for applying a high temperature heat treatment to a semiconductor wafer |
摘要 |
The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less than about 550° C. and include a first temperature ramp-up to the HT treatment temperatures at rates of 6° C./min or less. These methods are advantageously applied to semiconductor wafers comprising layers of different thermal properties, and in particular to semiconductor wafers comprising silicon-on-insulator structures.
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申请公布号 |
US7585793(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20060529959 |
申请日期 |
2006.09.29 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
MALEVILLE CHRISTOPHE;SCHWARZENBACH WALTER;RENAULD VIVIEN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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