发明名称 |
Method of fabricating a semiconductor device |
摘要 |
The semiconductor device of this invention includes an active region formed from a group III nitride semiconductor grown on a substrate and an insulating oxide film formed in a peripheral portion of the active region by oxidizing the group III nitride semiconductor. On the active region, a gate electrode in Schottky contact with the active region extending onto the insulating oxide film and having an extended portion on the insulating oxide film is formed, and ohmic electrodes respectively serving as a source electrode and a drain electrode are formed with space from side edges along the gate length direction of the gate electrode.
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申请公布号 |
US7585706(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20070898951 |
申请日期 |
2007.09.18 |
申请人 |
PANASONIC CORPORATION |
发明人 |
NISHII KATSUNORI;INOUE KAORU;MATSUNO TOSHINOBU;IKEDA YOSHITO;MASATO HIROYUKI |
分类号 |
H01L21/336;H01L29/73;H01L21/306;H01L21/316;H01L21/331;H01L21/335;H01L21/338;H01L29/20;H01L29/205;H01L29/778;H01L29/812;H01S5/028;H01S5/323 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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