发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
An extension region is formed by ion implantation under masking by a gate electrode, and then a substance having a diffusion suppressive function over an impurity contained in a source-and-drain is implanted under masking by the gate electrode and a first sidewall spacer so as to form amorphous layers a semiconductor substrate within a surficial layer thereof and in alignment with the first sidewall spacer, to thereby form an amorphous diffusion suppressive region.
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申请公布号 |
US7585739(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20070984737 |
申请日期 |
2007.11.21 |
申请人 |
FUJITSU MICROELECTRONICS LIMITED |
发明人 |
SAIKI TAKASHI;OHTA HIROYUKI;KANATA HIROYUKI |
分类号 |
H01L21/336;H01L21/265;H01L21/8238;H01L27/092;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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