发明名称 |
Method of manufacturing semiconductor device having multiple gate insulation films |
摘要 |
A method of manufacturing a semiconductor device includes the steps of: preparing a semiconductor substrate having first and second element forming regions, the first and second element forming regions divided by an element separating insulation film; forming a first gate insulation film on the semiconductor substrate; forming a predetermined film on the first gate insulation film; forming a protective film on the predetermined film in the first element forming region; forming a second gate insulation film in the second element forming region by deforming the predetermined film into an insulation film using the protective film as a mask; removing the protective film and the remaining predetermined film which is not deformed into the insulated film; and forming gate electrodes on the first and second gate insulation films which are exposed by removing the remaining predetermined film.
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申请公布号 |
US7585733(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20060275825 |
申请日期 |
2006.01.30 |
申请人 |
OKI SEMICONDUCTOR CO., LTD. |
发明人 |
MUTO KOKI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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