发明名称 |
Critical current density in Nb3Sn superconducting wire |
摘要 |
Critical current densities of internal tin wire having values of at least 2000 A/mm2 at temperature of 4.2 K and in magnetic field of 12 T are achieved by controlling the following parameters in a distributed barrier subelement design: wt % Sn in bronze; atomic Nb:Sn; local area ratio; reactable barrier; and barrier thickness relative to the filament thickness; and the design for restacking and wire reduction to control the maximum filament diameter at the subsequent heat reaction stage.
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申请公布号 |
US7585377(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20080074714 |
申请日期 |
2008.03.04 |
申请人 |
OXFORD SUPERCONDUCTING TECHNOLOGY |
发明人 |
FIELD MICHAEL;PARRELL JEFF;ZHANG YOUZHU;HONG SEUNGOK |
分类号 |
H01L39/04 |
主分类号 |
H01L39/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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