发明名称 |
Magneto-resistance effect element and magnetic memory device |
摘要 |
The invention relates to a magneto-resistance effect element and a magnetic memory device. Lowering the magnetic domain wall movement current and drive at room temperature in a current induction single magnetic domain wall movement phenomenon are achieved. A magneto-resistance effect element is formed by including at least: a magnet wire 1 for forming magnetic domain wall potential 7 binding a single magnetic domain wall 2; a magnetic field applying means for generating a magnetic field for introducing the single magnetic domain wall 2 into the magnet wire 1; and a drive current applying means for applying the current 3 including a resonance frequency component determined on the basis of the magnetic domain wall potential 7.
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申请公布号 |
US7586781(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20050666172 |
申请日期 |
2005.10.26 |
申请人 |
KEIO UNIVERSITY |
发明人 |
SAITOH EIJI;MIYAJIMA HIDEKI |
分类号 |
G11C11/00;G11C11/14;G11C11/15 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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