| 摘要 |
A method is provided for controlling a voltage level supplied to a static random access memory ("SRAM"). In such method, when a column of the SRAM is selected for writing, a first p-type field effect transistor ("PFET") and a second PFET can be operated to supply the power at a lower voltage level to cells belonging to a selected column, the lower voltage level being lower than the power supply voltage level. The first PFET can have a conduction path connected between a power supply and the cells belonging to the selected column. The second PFET may have a conduction path connected between the cells belonging to the selected column and ground. While supplying the power at the lower voltage level, a cell belonging to the selected column may be written. When the column is no longer selected for writing, the first and second PFETs can be operated to supply the power at the power supply voltage level again to the cells belonging to the selected column.
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