| 摘要 |
<p>A semiconductor memory device and a manufacturing method thereof are provided to suppress a leakage current of a semiconductor device by preventing a residual film of a gate electrode layer. A tunnel insulating layer(101), a conductive layer(102) for a floating gate, a dielectric layer(103), the conductive layer(104) for a control gate, and a gate electrode layer(105) are successively stacked on a semiconductor substrate(100). The protective layer is formed in a sidewall and an upper part of the gate electrode layer. The protective layer is the oxide layer. The protective layer is formed in the upper part of the gate electrode layer with the thickness of 700 to 1000 angstrom. The gate electrode layer is made of tungsten. A critical dimension of the insulating layer is 10 to 25 percent larger than the critical dimension of the gate electrode layer.</p> |
