| 摘要 |
The semiconductor laser diode formed with a window at a cleavage facet and a fabricating method thereof are disclosed, wherein a ridge adjacent to a cleavage facet of the semiconductor laser diode and part of the p-clad layer underneath the ridge are etched to form a window, such that a current is not applied to along the cleavage facet to thereby prevent the cleavage facet from being degraded and to enhance reliability of the diode.
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