发明名称 |
Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device |
摘要 |
Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.
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申请公布号 |
US7585786(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20040010223 |
申请日期 |
2004.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
GOO JUSEON;HONG EUNKEE;KIM HONG-GUN;NA KYU-TAE |
分类号 |
H01L21/31;H01L21/316;H01L21/60;H01L21/768 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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