发明名称 Methods of forming a layer of material on a substrate and structures formed therefrom
摘要 A method for making a structure which may have at least one layer on a supporting substrate. The method includes at least the steps for forming from the supporting substrate an intermediate structure which may have an amorphous layer, a first crystalline layer containing point defects and, a second crystalline layer located immediately underneath the amorphous layer and in the lower portion of the intermediate structure. The method may also include bonding a receiving substrate on the upper face of the intermediate structure and removing the layer of the intermediate structure in which point defects have formed so that amorphous layer forms the upper layer of the intermediate structure. A structure made by such a method may comprise at least one thin layer of an amorphous material on a supporting substrate. The structure may comprise a receiving substrate, a central crystalline layer and an amorphous layer, all of which may lack any EOR type point defect.
申请公布号 US7585749(B2) 申请公布日期 2009.09.08
申请号 US20060504256 申请日期 2006.08.14
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 HEBRAS XAVIER
分类号 H01L21/30;H01L21/00;H01L21/04 主分类号 H01L21/30
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