发明名称 |
Non-volatile memory and method of fabricating same |
摘要 |
In one embodiment, a semiconductor device includes a semiconductor substrate having a first junction region and a second junction region. An insulated floating gate is disposed on the substrate. The floating gate at least partially overlaps the first junction region. An insulated program gate is disposed on the floating gate. The program gate has a curved upper surface. The semiconductor device further includes an insulated erase gate disposed on the substrate and adjacent the floating gate. The erase gate partially overlaps the second junction region.
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申请公布号 |
US7586146(B2) |
申请公布日期 |
2009.09.08 |
申请号 |
US20070837361 |
申请日期 |
2007.08.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON HEE-SEOG;YOON SEUNG-BEOM;HAN JEONG-UK |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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